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KMID : 0381920000300030249
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Korean Journal of Microscopy
2000 Volume.30 No. 3 p.249 ~ p.254
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A Study on the Interfacial Reaction of Co/Al Multilayer System
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Kang Sung-Kwan
Lee Sang-Hoon
Ko Dae-Hong
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Abstract
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We investigated the microstructure, electrical property, and magnetic property of Co/Al multilayer after annealing treatment. CoAl was formed during depositing Co/Al multilayer due to the interfacial reaction. After annealing treatment, $Co_2Si$ was formed at the Co/Si interface. The sheet resistance of Co 2 nm/Al 2 nm multilayer have the lowest value and the Rs of multilayer decreased with the increase of annealing temperature due to the formation of $Co_2Si$ phase. The Ms of 2 nm Co/2 nm Al multilayer have the lowest value and the Ms of multilayer increased with the increase of film thickness.
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KEYWORD
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CoAl, Co/Al, Interfacial reaction, Microsuuctures, Multilayer
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